Effect of solar cell structure on the radiation resistance of an InP solar cell

Author(s): Halima Mazouza, Abdrahmane Belghachib, and Pierre-Olivier Logeraisc
a Renewable energies department, Faculty of technology, Blida 1 university, Soumaa road, BP 270 Blida, Algeria
SDPL, Faculty of Science and Technology, University of Bechar, BP 417, Kenadsa Road, Bechar, Algeria
Université Paris-Est, CERTES, IUT de Sénart-Fontainebleau, 36 rue Georges Charpak, 77567 Lieusaint, France
International Journal of Smart Grid and Clean Energy, vol. 9, no. 1, January 2020: pp. 205-211
ISSN: 2315-4462 (Print)
ISSN: 2373-3594 (Online)
Digital Object Identifier: 10.12720/sgce.9.1.205-211

Abstract: Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n Indium Phosphide (InP) solar cells with very thin emitters. The simulation results reveal that the n/p structure offers a somewhat better short-circuit current and that the p/n structure renders an improved open-circuit voltage, not only before electron irradiation but also after 1 MeV electron irradiation with 5×1015 electrons per cm2 fluence. Further, the calculated findings highlight that the n/p solar cell structure is more resistant than that of a p/n structure.

Keywords: Solar cell, InP, electron irradiation, 1 MeV
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