Calculation and analysis of electron transport coefficients in BF3-N2 and TMS-N2 gas mixtures
Author(s):Phan Thi Tuoia, Pham Xuan Hiena*, Tran Thanh Sonb, Do Anh Tuana
a Faculty of Electronics and Electrical Engineering, Hung Yen University of Technology and Education, Hung Yen 160000, Vietnam
ISSN: 2315-4462 (Print)
ISSN: 2373-3594 (Online)
Digital Object Identifier: 10.12720/sgce.6.2.77-83
Keywords:Electron transport coefficients; BF3-N2 mixture; TMS-N2 mixture; gas mixture; plasma processing
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a Faculty of Electronics and Electrical Engineering, Hung Yen University of Technology and Education, Hung Yen 160000, Vietnam
b Electric Power University, Ha Noi 100000, Vietnam
International Journal of Smart Grid and Clean Energy, vol. 6, no. 2, Arpil 2017: pp. 77-83ISSN: 2315-4462 (Print)
ISSN: 2373-3594 (Online)
Digital Object Identifier: 10.12720/sgce.6.2.77-83
Abstract:The electron transport coefficients in both of pure gases and their mixtures are necessary data for expansion of the choices of proper gases in plasma processing. The electron transport coefficients, which include electron drift velocities, density-normalized longitudinal diffusion coefficients and density-normalized effective ionization coefficients in BF3-N2 and TMS-N2 mixtures, were firstly calculated and analyzed using a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results are very useful to consider for using BF3-N2 and TMS-N2 mixtures with various mixture ratios in plasma processing such as plasma etching, plasma-enhanced chemical vapor deposition and doping plasma.
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